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Transistor
2SC1360, 2SC1360A
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
Unit: mm
5.90.2 4.90.2
q q
Parameter Collector to base voltage Collector to 2SC1360 2SC1360A 2SC1360
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings 50 60 45 60 4 50 1 150 -55 ~ +150
Unit V
0.45+0.2 -0.1
13.50.5
0.45+0.2 -0.1 (1.27) (1.27) 123
s Absolute Maximum Ratings
(Ta=25C)
emitter voltage 2SC1360A Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
V V mA W C C
(3.2)
0.7+0.3 -0.2
High transition frequency fT. Large collector power dissipation PC.
0.70.1
8.60.2
s Features
2.540.15
1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L-A1 Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC1360 2SC1360A 2SC1360 2SC1360A
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cre PG Conditions VCB = 20V, IE = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCB = 10V, IE = -10mA IC = 20mA, IB = 2mA VCB = 10V, IE = -10mA, f = 100MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 58MHz 22 300 1.5 30 50 60 45 60 4 20 100 0.4 V MHz pF dB min typ max 100 Unit nA V
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain
317
Transistor
PC -- Ta
1.2 80 70 1.0
2SC1360, 2SC1360A
IC -- VCE
60 25C VCE=10V
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (mA)
60 1.6mA 50 40 30 20 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA
0.8
Collector current IC (mA)
IB=2.0mA 1.8mA
50 Ta=75C 40 -25C
0.6
30
0.4
20
0.2
10
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C IC/IB=10 120
hFE -- IC
600 VCE=10V VCB=10V Ta=25C
fT -- I E
Forward current transfer ratio hFE
100
Transition frequency fT (MHz)
30 100
500
80 Ta=75C 60 25C 40 -25C
400
300
200
20
100
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C
Cre -- VCE
Common emitter reverse transfer capacitance Cre (pF)
-2.4 IC=1mA f=10.7MHz Ta=25C 30
PG -- IE
VCB=10V f=58MHz Ta=25C
3.0
2.5
-2.0
25
2.0
-1.6
Power gain PG (dB)
1 3 10 30 100
20
1.5
-1.2
15
1.0
- 0.8
10
0.5
- 0.4
5
0 1 3 10 30 100
0
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
Emitter current IE (mA)
318
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2001 MAR

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